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Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

✍ Scribed by Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Jimbo, T.

Book ID: 118123549
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 430 KB
Volume: 82
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1571655

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