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Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

✍ Scribed by Hofmann, T.; Kühne, P.; Schöche, S.; Chen, Jr-Tai; Forsberg, U.; Janzén, E.; Ben Sedrine, N.; Herzinger, C. M.; Woollam, J. A.; Schubert, M.; Darakchieva, V.

Book ID: 118174546
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 569 KB
Volume: 101
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4765351

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