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Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors

✍ Scribed by Pei, Y.; Chu, R.; Shen, L.; Fichtenbaum, N.A.; Chen, Z.; Brown, D.; Keller, S.; Denbaars, S.P.; Mishra, U.K.

No coin nor oath required. For personal study only.

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