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High temperature power performance of AlGaNâGaN high-electron-mobility transistors on high-resistivity silicon

✍ Scribed by Arulkumaran, S.; Ng, G. I.; Liu, Z. H.; Lee, C. H.

Book ID: 121241739
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 616 KB
Volume: 91
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2773987

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