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N-polar GaNâAlGaNâGaN high electron mobility transistors

✍ Scribed by Rajan, Siddharth; Chini, Alessandro; Wong, Man Hoi; Speck, James S.; Mishra, Umesh K.

Book ID: 120032860
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 995 KB
Volume: 102
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2769950

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