Studies on electron beam evaporated ZrO2
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Balachander, Krishnan ;Arulkumaran, Subramaniam ;Ishikawa, Hiroyasu ;Baskar, Kri
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Article
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2005
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John Wiley and Sons
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English
⚖ 249 KB
## Abstract Metal–oxide–semiconductor high‐electron‐mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO~2~. The composition of the EB deposited ZrO~2~ thin films was confirmed using X‐ray photoelectron spectroscopy (XPS). The fabricated ZrO~2~‐based MOSHEMTs e