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Investigations of HfO[sub 2]∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors

✍ Scribed by Liu, Chang; Chor, Eng Fong; Tan, Leng Seow


Book ID
120225507
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
440 KB
Volume
88
Category
Article
ISSN
0003-6951

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## Abstract Metal–oxide–semiconductor high‐electron‐mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO~2~. The composition of the EB deposited ZrO~2~ thin films was confirmed using X‐ray photoelectron spectroscopy (XPS). The fabricated ZrO~2~‐based MOSHEMTs e