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AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc[sub 2]O[sub 3] as the gate oxide and surface passivation

✍ Scribed by Mehandru, R.; Luo, B.; Kim, J.; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R.; Gillespie, J.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.

Book ID: 121749551
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 289 KB
Volume: 82
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1567051

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