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Influence of MgO and Sc[sub 2]O[sub 3] passivation on AlGaN/GaN high-electron-mobility transistors

✍ Scribed by Luo, B.; Johnson, J. W.; Kim, J.; Mehandru, R. M.; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Baca, A. G.; Briggs, R. D.; Shul, R. J.; Monier, C.; Han, J.

Book ID: 120473560
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 271 KB
Volume: 80
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1455692

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