Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al[sub 2]O[sub 3] passivation

✍ Scribed by Liu, Z. H.; Ng, G. I.; Zhou, H.; Arulkumaran, S.; Maung, Y. K. T.

• Book ID: 120088116
• Publisher: American Institute of Physics
• Year: 2011
• Tongue: English
• Weight: 812 KB
• Volume: 98
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.3567927