Temperature-dependent forward gate current transport in atomic-layer-deposited Al[sub 2]O[sub 3]/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

✍ Scribed by Liu, Z. H.; Ng, G. I.; Arulkumaran, S.; Maung, Y. K. T.; Zhou, H.

• Book ID: 120088117
• Publisher: American Institute of Physics
• Year: 2011
• Tongue: English
• Weight: 949 KB
• Volume: 98
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.3573794