✦ LIBER ✦

Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from â50 to 200âÂ°C

✍ Scribed by Liu, Z. H.; Arulkumaran, S.; Ng, G. I.

Book ID: 120268095
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 493 KB
Volume: 94
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3114422

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Properties of Ir-based Ohmic contacts to

Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors

✍ Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Cre 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 307 KB

Improved morphology for ohmic contacts t

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

✍ Luo, B.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Jenkins, T.; Sewell, J.; Via, 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 470 KB

Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from â50 to 200âÂ°C

Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from â50 to 200âÂ°C