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Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

✍ Scribed by Luo, B.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Baca, A. G.; Briggs, R. D.; Gotthold, D.; Birkhahn, R.; Peres, B.; Pearton, S. J.

Book ID: 115484009
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 470 KB
Volume: 82
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1579845

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