Ti-based nonalloyed Ohmic contacts for Al0.15Ga0.85N/GaN high electron mobility transistors using regrown n+-GaN by plasma assisted molecular beam epitaxy

Metal-face InAlN/AlN/GaN high electron m

Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy

✍ Guo, Jia ;Cao, Yu ;Lian, Chuanxin ;Zimmermann, Tom ;Li, Guowang ;Verma, Jai ;Gao 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 307 KB

## Abstract Ohmic regrowth by molecular beam epitaxy (MBE) has been investigated for metal‐face InAlN/AlN/GaN high electron mobility transistors (HEMTs) for the first time. Using SiO~2~ mask n^+^‐GaN was regrown in the source/drain region while deposition on the mask was lifted off in buffered HF a