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Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors

✍ Scribed by Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A. M.; Chow, P. P.; Osinsky, A.; La Roche, J. R.; Ren, F.; Pearton, S. J.

Book ID: 127321739
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 307 KB
Volume: 84
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1651649

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