✦ LIBER ✦

Mechanism of ohmic contact formation in AlGaN/GaN high electron mobility transistors

✍ Scribed by Chaturvedi, N; Zeimer, U; Würfl, J; Tränkle, G

Book ID: 119950369
Publisher: Institute of Physics
Year: 2006
Tongue: English
Weight: 401 KB
Volume: 21
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/21/2/014

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

AlGaN/GaN high electron mobility transis

AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

✍ H.T. Wang; L.S. Tan; E.F. Chor 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 300 KB

Properties of Ir-based Ohmic contacts to

Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors

✍ Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Cre 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 307 KB

Ohmic contacts to n[sup +]-GaN capped Al

Ohmic contacts to n[sup +]-GaN capped AlGaNâAlNâGaN high electron mobility transistors

✍ Wang, Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 690 KB

Mechanisms of gate lag in GaN/AlGaN/GaN

Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors

✍ Oleg Mitrofanov; Michael Manfra 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 801 KB

Characterization of Non-Alloyed Ohmic Co

Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors

✍ M. Kocan; G.A. Umana-Membreno; J.S. Chung; F. Recht; L. McCarthy; S. Keller; U.K 📂 Article 📅 2007 🏛 Springer US 🌐 English ⚖ 236 KB

Effects of deep-level defects on ohmic c

Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors

✍ Jessen, G. H.; Fitch, R. C.; Gillespie, J. K.; Via, G. D.; White, B. D.; Bradley 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 233 KB