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Ohmic contacts to n[sup +]-GaN capped AlGaNâAlNâGaN high electron mobility transistors

✍ Scribed by Wang, Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

Book ID: 120449019
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 690 KB
Volume: 91
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2754371

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