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Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors

✍ Scribed by Jessen, G. H.; Fitch, R. C.; Gillespie, J. K.; Via, G. D.; White, B. D.; Bradley, S. T.; Walker, D. E.; Brillson, L. J.

Book ID: 127244676
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 233 KB
Volume: 83
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1593829

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