✦ LIBER ✦

Studies on electron beam evaporated ZrO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

✍ Scribed by Balachander, Krishnan ;Arulkumaran, Subramaniam ;Ishikawa, Hiroyasu ;Baskar, Krishnan ;Egawa, Takashi

Book ID: 105362955
Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 249 KB
Volume: 202
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200409084

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✦ Synopsis

Abstract

Metal–oxide–semiconductor high‐electron‐mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO~2~. The composition of the EB deposited ZrO~2~ thin films was confirmed using X‐ray photoelectron spectroscopy (XPS). The fabricated ZrO~2~‐based MOSHEMTs exhibited high positive gate voltage of operation up to +7 V with low gate leakage current. For a comparison, conventional high‐electron‐mobility transistors (HEMTs) were also fabricated with identical device dimensions. The maximum drain current densities of 1168 and 538 mA/mm were observed on MOSHEMTs and HEMTs, respectively. Low gate leakage current density of four orders of magnitude was observed on ZrO~2~‐based MOSHEMTs when compared with the conventional HEMTs. The observation of high forward on‐voltage with low gate leakage current density and high positive operational voltage reveals the importance of ZrO~2~ dielectric films for MOSHEMT devices. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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