## Abstract We report on the fabrication of AlGaN/GaN double‐insulator MOSHEMTs using SiO~2~ and SiN as the prime gate insulators. Both the dielectrics showed enhanced saturation current density and pinch‐off voltage compared to conventional HEMTs. The SiO~2~/SiN/AlGaN/GaN MOSHEMTs exhibited a low
✦ LIBER ✦
A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
✍ Scribed by Liu, Han-Yin; Chou, Bo-Yi; Hsu, Wei-Chou; Lee, Ching-Sung; Ho, Chiu-Sheng
- Book ID
- 120091830
- Publisher
- IEEE
- Year
- 2012
- Tongue
- English
- Weight
- 407 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0741-3106
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