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Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

✍ Scribed by Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

Book ID: 120444914
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 868 KB
Volume: 544
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2013.01.028

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## Abstract We report on the fabrication of AlGaN/GaN double‐insulator MOSHEMTs using SiO~2~ and SiN as the prime gate insulators. Both the dielectrics showed enhanced saturation current density and pinch‐off voltage compared to conventional HEMTs. The SiO~2~/SiN/AlGaN/GaN MOSHEMTs exhibited a low