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Electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor using La2O3gate dielectric

✍ Scribed by Qian Feng, Qiang Wang, Tao Xing, Qian Li, Yue Hao

Book ID: 120799390
Publisher: SP Science China Press
Year: 2013
Tongue: English
Weight: 493 KB
Volume: 56
Category: Article
ISSN: 1006-9321
DOI: 10.1007/s11431-012-5127-8

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