✦ LIBER ✦

The reduction of gate leakage of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors by N 2 plasma pretreatment

✍ Scribed by Feng, Qian; Hao, Yue; Yue, Yuan-Zheng

Book ID: 120205168
Publisher: Institute of Physics
Year: 2009
Tongue: English
Weight: 520 KB
Volume: 24
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/24/2/025030

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Demonstration of AlGaN/GaN metal-oxide-s

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

✍ K. Balachander; S. Arulkumaran; T. Egawa; Y. Sano; K. Baskar 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 289 KB

Electrical characteristics of AlGaN/GaN

Electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor using La2O3gate dielectric

✍ Qian Feng, Qiang Wang, Tao Xing, Qian Li, Yue Hao 📂 Article 📅 2013 🏛 SP Science China Press 🌐 English ⚖ 493 KB

Fabrication of AlGaN/GaN double-insulato

Fabrication of AlGaN/GaN double-insulator metal-oxide-semiconductor high-electron-mobility transistors using SiO2and SiN as gate insulators

✍ Balachander, Krishnan ;Arulkumaran, Subramaniam ;Sano, Y. ;Egawa, Takashi ;Baska 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 164 KB

## Abstract We report on the fabrication of AlGaN/GaN double‐insulator MOSHEMTs using SiO~2~ and SiN as the prime gate insulators. Both the dielectrics showed enhanced saturation current density and pinch‐off voltage compared to conventional HEMTs. The SiO~2~/SiN/AlGaN/GaN MOSHEMTs exhibited a low

AlGaN/GaN metal–oxide–semiconductor high

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc[sub 2]O[sub 3] as the gate oxide and surface passivation

✍ Mehandru, R.; Luo, B.; Kim, J.; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 289 KB

Investigation of gate leakage mechanism

Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

✍ Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue 📂 Article 📅 2014 🏛 American Institute of Physics 🌐 English ⚖ 813 KB

Physical and electrical characteristics

Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

✍ Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 868 KB