✦ LIBER ✦

Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

✍ Scribed by Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

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