Photoelectrochemical Function in Gate-Recessed AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
✍ Scribed by Ya-lan Chiou; Li-hsien Huang; Ching-ting Lee
- Book ID
- 126762676
- Publisher
- IEEE
- Year
- 2010
- Tongue
- English
- Weight
- 197 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0741-3106
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📜 SIMILAR VOLUMES
## Abstract Metal–oxide–semiconductor high‐electron‐mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO~2~. The composition of the EB deposited ZrO~2~ thin films was confirmed using X‐ray photoelectron spectroscopy (XPS). The fabricated ZrO~2~‐based MOSHEMTs e
## Abstract We report on the fabrication of AlGaN/GaN double‐insulator MOSHEMTs using SiO~2~ and SiN as the prime gate insulators. Both the dielectrics showed enhanced saturation current density and pinch‐off voltage compared to conventional HEMTs. The SiO~2~/SiN/AlGaN/GaN MOSHEMTs exhibited a low