AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High- $k$ Oxynitride $\hbox{TaO}_{x} \hbox{N}_{y}$ Gate Dielectric

✍ Scribed by Sato, Taku; Okayasu, Junich; Takikawa, Masahiko; Suzuki, Toshi-kazu

• Book ID: 120607535
• Publisher: IEEE
• Year: 2013
• Tongue: English
• Weight: 472 KB
• Volume: 34
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2012.2237499