✦ LIBER ✦

GaNâAlGaN heterostructure field-effect transistors over bulk GaN substrates

✍ Scribed by Asif Khan, M.; Yang, J. W.; Knap, W.; Frayssinet, E.; Hu, X.; Simin, G.; Prystawko, P.; Leszczynski, M.; Grzegory, I.; Porowski, S.; Gaska, R.; Shur, M. S.; Beaumont, B.; Teisseire, M.; Neu, G.

Book ID: 120407078
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 292 KB
Volume: 76
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.126788

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

AlGaN/GaInN/GaN heterostructure field-ef

AlGaN/GaInN/GaN heterostructure field-effect transistor

✍ Ikki, Hiromichi ;Isobe, Yasuhiro ;Iida, Daisuke ;Iwaya, Motoaki ;Takeuchi, Tetsu 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 428 KB

## Abstract We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN,

Material growth and device characterizat

Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates

✍ Hsiao, Yu-Lin; Chang, Chia-Ao; Chang, Edward Yi; Maa, Jer-Shen; Chang, Chia-Ta; 📂 Article 📅 2014 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 981 KB

Temperature dependence of impact ionizat

Temperature dependence of impact ionization in AlGaNâGaN heterostructure field effect transistors

✍ Dyakonova, N.; Dickens, A.; Shur, M. S.; Gaska, R.; Yang, J. W. 📂 Article 📅 1998 🏛 American Institute of Physics 🌐 English ⚖ 248 KB

AlGaN/GaN heterostructure field-effect t

AlGaN/GaN heterostructure field-effect transistor model including thermal effects

✍ Albrecht, J.D.; Ruden, P.P.; Binari, S.C.; Ancona, M.G. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 125 KB

High electron mobility in AlGaN/GaN hete

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

✍ Frayssinet, E.; Knap, W.; Lorenzini, P.; Grandjean, N.; Massies, J.; Skierbiszew 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 299 KB

Generation-recombination noise in GaN/Al

Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors

✍ Rumyantsev, S.L.; Pala, N.; Shur, M.S.; Borovitskaya, E.; Dmitriev, A.P.; Levins 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 108 KB

GaNâAlGaN heterostructure field-effect transistors over bulk GaN substrates

GaNâAlGaN heterostructure field-effect transistors over bulk GaN substrates