✦ LIBER ✦

Temperature dependence of impact ionization in AlGaNâGaN heterostructure field effect transistors

✍ Scribed by Dyakonova, N.; Dickens, A.; Shur, M. S.; Gaska, R.; Yang, J. W.

Book ID: 121482912
Publisher: American Institute of Physics
Year: 1998
Tongue: English
Weight: 248 KB
Volume: 72
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.121418

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

GaNâAlGaN heterostructure field-effect

GaNâAlGaN heterostructure field-effect transistors over bulk GaN substrates

✍ Asif Khan, M.; Yang, J. W.; Knap, W.; Frayssinet, E.; Hu, X.; Simin, G.; Prystaw 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 292 KB

Temperature activated conductance in GaN

Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300âÂ°C

✍ Khan, M. Asif; Shur, Michael S.; Kuznia, John N.; Chen, Q.; Burm, Jin; Schaff, W 📂 Article 📅 1995 🏛 American Institute of Physics 🌐 English ⚖ 234 KB

Low-frequency noise in GaN/AlGaN heteros

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

✍ Rumyantsev, S. L.; Deng, Y.; Borovitskaya, E.; Dmitriev, A.; Knap, W.; Pala, N.; 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 323 KB

Generation-recombination noise in GaN/Al

Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors

✍ Rumyantsev, S.L.; Pala, N.; Shur, M.S.; Borovitskaya, E.; Dmitriev, A.P.; Levins 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 108 KB

Contact Resistance Reduction in AlGaN/Ga

Contact Resistance Reduction in AlGaN/GaN Heterostructure Field Effect Transistors

✍ R. Amaya; J. Bardwell; J. Webb; H. Tang; T.W. MacElwee; N.G. Tarr 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 109 KB

Refractive index changes in AlGaN/GaN he

Refractive index changes in AlGaN/GaN heterostructure field-effect transistors

✍ I. Saidi; L. Bouzaïene; H. Mejri; H. Maaref 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 254 KB

Using the envelope wavefunction approximation and the compact density matrix formalism, we have investigated theoretically the linear and nonlinear refractive index changes in AlGaN/GaN quantum well heterostructures aimed for designing electro-optical modulators. The confining potential in the heter

Temperature dependence of impact ionization in AlGaNâGaN heterostructure field effect transistors

Temperature dependence of impact ionization in AlGaNâGaN heterostructure field effect transistors