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Contact Resistance Reduction in AlGaN/GaN Heterostructure Field Effect Transistors

✍ Scribed by R. Amaya; J. Bardwell; J. Webb; H. Tang; T.W. MacElwee; N.G. Tarr


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
109 KB
Volume
0
Category
Article
ISSN
1862-6351

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Refractive index changes in AlGaN/GaN he
✍ I. Saidi; L. BouzaΓ―ene; H. Mejri; H. Maaref πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 254 KB

Using the envelope wavefunction approximation and the compact density matrix formalism, we have investigated theoretically the linear and nonlinear refractive index changes in AlGaN/GaN quantum well heterostructures aimed for designing electro-optical modulators. The confining potential in the heter