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Field-effect transistors based on AlGaN/GaN/AlGaN double-heterostructures grown by MBE

✍ Scribed by S. B. Aleksandrov; D. A. Baranov; V. P. Chaly; D. M. Krasovitsky; M. V. Pavlenko; S. I. Petrov; Yu. V. Pogorelsky; I. A. Sokolov; M. A. Sokolov; L. E. Velikovsky; N. I. Podolskaya; K. A. Bulashevich; S. Yu. Karpov

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 178 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461394

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