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Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

✍ Scribed by Rumyantsev, S. L.; Deng, Y.; Borovitskaya, E.; Dmitriev, A.; Knap, W.; Pala, N.; Shur, M. S.; Levinshtein, M. E.; Khan, M. Asif; Simin, G.; Yang, J.; Hu, X.

Book ID: 120407084
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 323 KB
Volume: 92
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1508432

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