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Low-frequency noise in AlGaN/GaN heterostructure field effect transistors

✍ Scribed by Kuksenkov, D.V.; Temkin, H.; Gaska, R.; Yang, J.W.

Book ID: 120301095
Publisher: IEEE
Year: 1998
Tongue: English
Weight: 70 KB
Volume: 19
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.701423

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## Abstract We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN,