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AlGaN/GaInN/GaN heterostructure field-effect transistor

✍ Scribed by Ikki, Hiromichi ;Isobe, Yasuhiro ;Iida, Daisuke ;Iwaya, Motoaki ;Takeuchi, Tetsuya ;Kamiyama, Satoshi ;Akasaki, Isamu ;Amano, Hiroshi ;Bandoh, Akira ;Udagawa, Takashi

Book ID
105366082
Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
428 KB
Volume
208
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 × 10^13^ cm^βˆ’2^ at an InN molar fraction of 0.60. The Al~0.30~Ga~0.70~N/Ga~0.40~In~0.60~N heterostructure exhibited static field‐effect transistor (FET) characteristics.

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