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High magnetic field studies of 1/fnoise in GaN/AlGaN heterostructure field effect transistors

✍ Scribed by Dyakonova, N. ;Rumyantsev, S. L. ;Shur, M. S. ;Meziani, Y. ;Pascal, F. ;Hoffmann, A. ;Fareed, Q. ;Hu, X. ;Bilenko, Yu. ;Gaska, R. ;Knap, W.

Book ID
105363074
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
77 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The influence of strong magnetic field on the 1/f noise in AlGaN/GaN metal‐oxide‐Semiconductor heterostructure field effect transistors (MOSHFETs) has been studied. The independence of 1/f noise on the magnetic fields up to 10 T where the strong geometric magneto‐resistance has been observed, shows that the carrier number fluctuations is the dominant mechanism of the noise in these devices. (Β© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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