SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors

✍ Scribed by Kayis, Cemil; Zhu, C. Y.; Wu, Mo; Li, Xing; Özgür, Ümit; Morkoç, Hadis; Chyi, Jen-Inn; Nanishi, Yasushi; Morkoç, Hadis; Piprek, Joachim; Yoon, Euijoon

• Book ID: 111691890
• Publisher: SPIE
• Year: 2011
• Weight: 700 KB
• Volume: 7939
• Category: Article
• DOI: 10.1117/12.875723