SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Recent results on the physical origin of the degradation of GaN-based LEDs and lasers

✍ Scribed by Meneghini, M.; Trivellin, N.; Meneghesso, G.; Orita, K.; Takigawa, S.; Tanaka, T.; Ueda, D.; Zanoni, E.; Chyi, Jen-Inn; Nanishi, Yasushi; Morkoç, Hadis; Piprek, Joachim; Yoon, Euijoon

• Book ID: 121381723
• Publisher: SPIE
• Year: 2011
• Weight: 229 KB
• Volume: 7939
• Category: Article
• DOI: 10.1117/12.872986