SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Impact of ballistic electron transport on efficiency of InGaN based LEDs

✍ Scribed by Zhang, F.; Li, X.; Liu, S.; Okur, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Matulionis, A.; Kisin, M.; Chyi, Jen-Inn; Nanishi, Yasushi; Morkoç, Hadis; Piprek, Joachim; Yoon, Euijoon

• Book ID: 111681720
• Publisher: SPIE
• Year: 2011
• Weight: 214 KB
• Volume: 7939
• Category: Article
• DOI: 10.1117/12.875806