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SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers

✍ Scribed by Yang, Chih-Ciao; Sheu, Jinn-Kong; Huang, Min-Shun; Tu, Shang-Ju; Huang, Feng-Wen; Chang, Kuo-Hua; Lee, Ming-Lun; Lai, Wei-Chih; Chyi, Jen-Inn; Nanishi, Yasushi; Morkoç, Hadis; Piprek, Joachim; Yoon, Euijoon

Book ID: 120822138
Publisher: SPIE
Year: 2011
Weight: 583 KB
Volume: 7939
Category: Article
DOI: 10.1117/12.876366

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