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SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Gallium Nitride Materials and Devices VIII - Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects

✍ Scribed by Zhu, Congyong; Zhang, Fan; Ferreyra, Romualdo A.; Li, Xing; Kayis, Cemil; Avrutin, Vitaliy; Özgür, Ümit; Morkoç, Hadis; Chyi, Jen-Inn; Nanishi, Yasushi; Morkoç, Hadis; Piprek, Joachim; Yoon, Euijoon; Fujioka, Hiroshi

Book ID: 120174129
Publisher: SPIE
Year: 2013
Weight: 239 KB
Volume: 8625
Category: Article
DOI: 10.1117/12.2000558

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