SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Gallium Nitride Materials and Devices VIII - The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors

✍ Scribed by Liu, L.; Lo, C. F.; Xi, Y. Y.; Wang, Y. X.; Kim, H.-Y.; Kim, J.; Pearton, S. J.; Laboutin, O.; Cao, Y.; Johnson, J. W.; Kravchenko, I. I.; Ren, F.; Chyi, Jen-Inn; Nanishi, Yasushi; Morkoç, Hadis; Piprek, Joachim; Yoon, Euijoon; Fujioka, Hiroshi

• Book ID: 121318346
• Publisher: SPIE
• Year: 2013
• Weight: 731 KB
• Volume: 8625
• Category: Article
• DOI: 10.1117/12.2007287