SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETs

✍ Scribed by Kayis, Cemil; Leach, Jacob H.; Zhu, C. Y.; Wu, Mo; Li, X.; Yang, X.; Misra, Veena; Handel, Peter H.; Özgür, Ü.; Morkoç, H.; Chyi, Jen-Inn; Nanishi, Yasushi; Morkoç, Hadis; Piprek, Joachim; Yoon, Euijoon

• Book ID: 111691889
• Publisher: SPIE
• Year: 2011
• Weight: 711 KB
• Volume: 7939
• Category: Article
• DOI: 10.1117/12.875692