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Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications

✍ Scribed by Balandin, A.; Morozov, S.V.; Cai, S.; Li, R.; Wang, K.L.; Wijeratne, G.; Viswanathan, C.R.

Book ID: 114553474
Publisher: IEEE
Year: 1999
Tongue: English
Weight: 166 KB
Volume: 47
Category: Article
ISSN: 0018-9480
DOI: 10.1109/22.780388

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