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DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration

✍ Scribed by Wu Lu; Kumar, V.; Piner, E.L.; Adesida, I.

Book ID: 114617041
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 423 KB
Volume: 50
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2003.812083

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