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Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates

✍ Scribed by Chumbes, E.M.; Smart, J.A.; Prunty, T.; Shealy, J.R.


Book ID
114538586
Publisher
IEEE
Year
2001
Tongue
English
Weight
83 KB
Volume
48
Category
Article
ISSN
0018-9383

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Microwave Simulation on the Performance
✍ Deng, J. ;IΓ±iguez, B. ;Shur, M. S. ;Gaska, R. ;Khan, M. A. ;Yang, J. W. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 119 KB πŸ‘ 2 views

We present the results of the simulation of dc and microwave performance of a GaN/AlGaN heterostructure field effect transistors and compare the results with recent record-breaking experimental data from Cree Research, Inc. Our simulation results are in good agreement with the data on the small sign