✦ LIBER ✦

Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

✍ Scribed by W. S. Tan; P. A. Houston; G. Hill; R. J. Airey; P. J. Parbook

Book ID: 107453022
Publisher: Springer US
Year: 2003
Tongue: English
Weight: 150 KB
Volume: 32
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-003-0157-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-Temperature Performance of AlGaN/Ga

High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors

✍ Simin, G. ;Tarakji, A. ;Hu, X. ;Koudymov, A. ;Yang, J. ;Asif Khan, M. ;Shur, M.S 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 80 KB 👁 2 views

Influence of dual-frequency plasma-enhan

Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

✍ W. S. Tan; P. A. Houston; G. Hill; R. J. Airey; P. J. Parbook 📂 Article 📅 2004 🏛 Springer US 🌐 English ⚖ 156 KB

Effect of Localized States on the Electr

Effect of Localized States on the Electrical Characteristics of Metal–Semiconductor Field-Effect Transistors

✍ Chattopadhyay, P. ;Pal, J. 📂 Article 📅 1995 🏛 John Wiley and Sons 🌐 English ⚖ 444 KB

Analytical performance evaluation of AlG

Analytical performance evaluation of AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor and its comparison with conventional HFETs for high power microwave applications

✍ Ruchika Aggarwal; Anju Agrawal; Mridula Gupta; R. S. Gupta 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 475 KB

## Abstract In this work, a comprehensive analytical model for AlGaN/GaN MISHFET has been presented to evaluate the drain current characteristics, transconductance, and cut‐off frequency of the insulated device. The model takes into account polynomial dependence of sheet carrier density on position

Electrical and optical characteristics o

Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator

✍ T Sawada; H Hasegawa; H Ohno 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 556 KB

Influence of 4H-SiC semi-insulating subs

Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance

✍ A. P. Zhang; L. B. Rowland; E. B. Kaminsky; J. B. Tucker; R. A. Beaupre; J. W. K 📂 Article 📅 2003 🏛 Springer US 🌐 English ⚖ 787 KB