✦ LIBER ✦

Nonpolar AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistors With a Normally Off Operation

✍ Scribed by Kuroda, M.; Ueda, T.; Tanaka, T.

Book ID: 114619896
Publisher: IEEE
Year: 2010
Tongue: English
Weight: 474 KB
Volume: 57
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2009.2037458

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Normally-Off AlGaN/GaN Metal–Oxide–Semic

Normally-Off AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier

✍ Kim, Dong-Seok; Im, Ki-Sik; Kang, Hee-Sung; Kim, Ki-Won; Bae, Sung-Bum; Mun, Jae 📂 Article 📅 2012 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 1022 KB

Electrical characteristics of AlGaN/GaN

Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

✍ W. S. Tan; P. A. Houston; G. Hill; R. J. Airey; P. J. Parbook 📂 Article 📅 2003 🏛 Springer US 🌐 English ⚖ 150 KB

Analytical performance evaluation of AlG

Analytical performance evaluation of AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor and its comparison with conventional HFETs for high power microwave applications

✍ Ruchika Aggarwal; Anju Agrawal; Mridula Gupta; R. S. Gupta 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 475 KB

## Abstract In this work, a comprehensive analytical model for AlGaN/GaN MISHFET has been presented to evaluate the drain current characteristics, transconductance, and cut‐off frequency of the insulated device. The model takes into account polynomial dependence of sheet carrier density on position