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Normally-Off AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier

✍ Scribed by Kim, Dong-Seok; Im, Ki-Sik; Kang, Hee-Sung; Kim, Ki-Won; Bae, Sung-Bum; Mun, Jae-Kyoung; Nam, Eun-Soo; Lee, Jung-Hee

Book ID: 118069985
Publisher: Institute of Pure and Applied Physics
Year: 2012
Tongue: English
Weight: 1022 KB
Volume: 51
Category: Article
ISSN: 0021-4922
DOI: 10.1143/jjap.51.034101

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## Abstract In this work, a comprehensive analytical model for AlGaN/GaN MISHFET has been presented to evaluate the drain current characteristics, transconductance, and cut‐off frequency of the insulated device. The model takes into account polynomial dependence of sheet carrier density on position