Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements

✍ Scribed by Kordos, P.; Stoklas, R.; Gregusova, D.; Gazi, S.; Novak, J.

• Book ID: 115525409
• Publisher: American Institute of Physics
• Year: 2010
• Tongue: English
• Weight: 436 KB
• Volume: 96
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.3275754