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AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2gate oxide

✍ Scribed by C. K. Wang; Y. Z. Chiou; S. J. Chang; Y. K. Su; B. R. Huang; T. K. Lin; S. C. Chen

Book ID: 107453032
Publisher: Springer US
Year: 2003
Tongue: English
Weight: 167 KB
Volume: 32
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-003-0167-2

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