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Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

✍ Scribed by Marso, M. ;Javorka, P. ;Dikme, Y. ;Kalisch, H. ;Bernát, J. ;Schäfer, C. ;Schineller, B. ;v. d. Hart, A. ;Wolter, M. ;Fox, A. ;Jansen, R. H. ;Heuken, M. ;Kordoš, P. ;Lüth, H.

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 81 KB
Volume: 200
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200303457

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