✦ LIBER ✦

Growth and characterization of AlGaN/GaN HEMT on SiCOI substrates

✍ Scribed by M. Fieger; Y. Dikme; F. Jessen; H. Kalisch; A. Noculak; A. Szymakowski; P. v. Gemmern; B. Faure; C. Richtarch; F. Letertre; M. Heuken; R. H. Jansen

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 282 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461451

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth and Characterisation of AlGaN/GaN

Growth and Characterisation of AlGaN/GaN HEMT on Silicon Substrates

✍ Kalisch, H. ;Dikme, Y. ;Gerstenbrandt, G. ;Alam, A. ;Szymakowski, A. ;Klockenhof 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 154 KB 👁 2 views

Deep levels and nonlinear characterizati

Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate

✍ M. Gassoumi; J.M. Bluet; C. Gaquière; G. Guillot; H. Maaref 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 291 KB

Fabrication and Performance of AlGaN/GaN

Fabrication and Performance of AlGaN/GaN HEMTs on (111) Si Substrates

✍ Javorka, P. ;Alam, A. ;Marso, M. ;Wolter, M. ;Fox, A. ;Heuken, M. ;Kordo?, P. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 113 KB 👁 2 views

Investigation of AlGaN/GaN HEMTs on Si S

Investigation of AlGaN/GaN HEMTs on Si Substrate Using Backgating

✍ M. Marso; M. Wolter; P. Javorka; A. Alam; A. Fox; M. Heuken; P. Kordoš; H. Lüth 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 96 KB

Reliability Evaluation of High Power AlG

Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate

✍ Kim, H. ;Tilak, V. ;Green, B.M. ;Smart, J.A. ;Schaff, W.J. ;Shealy, J.R. ;Eastma 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 86 KB 👁 2 views

Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we

Growth and fabrication of AlGaN/GaN HEMT

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

✍ Weijun Luo; Xiaoliang Wang; Hongling Xiao; Cuimei Wang; Junxue Ran; Lunchun Guo; 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 262 KB

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metalorganic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN H